Bridgman or molecular beam epitaxially grown material was implanted with In and Cd ions (60 to 350keV), and was studied by using the perturbed  angular correlation technique. It was found that both the implanted species and the type of material affected the annealing behavior. Emission channelling experiments, using implanted 111mCd ions, showed that, after implantation at 295K, the majority of implanted ions occupied substitutional lattice sites. The observed differences between Bridgman and molecular beam epitaxial material indicate that the annealing behavior depended upon the purity and crystal quality of the material. Photoluminescence measurements of In-implanted CdTe showed that, for overall recovery of the implanted layer, annealing temperatures of up to 800K were necessary.

A.Burchard, R.Magerle, J.Freidinger, S.G.Jahn, M.Deicher, Isolde: Journal of Crystal Growth, 1996, 161, 128-33