The properties of CdZnSe multi-quantum wells that had been grown, by means of molecular beam epitaxy, onto ZnSe monocrystals of high structural quality were studied. On the basis of high-resolution X-ray diffraction, transmission electron microscopic, and electro-optical measurements, it was shown that they were all superior to similar structures that had been grown onto (001) GaAs substrates using a 5-thick Ga0.96In0.04As buffer that was almost lattice-matched to ZnSe. Cross sectional transmission electron microscopic studies indicated that the III-V/II-VI interface was the source of the dislocations which were observed. In the case of the homo-epitaxial ZnSe/ZnSe interface, hardly any new dislocations were generated under optimum conditions. The full-width at half-maximum in the X-ray diffraction (004 reflection) of a 4-thick multi-quantum well structure was equal to 47arcsec. This was near to the value for the substrate material. In the case of epilayers, values which were as low as 21arcsec were observed. No significant broadening due to mosaicity could be detected in reciprocal space-mapping.

H.Wenisch, K.Schüll, T.Behr, D.Hommel, G.Landwehr, D.Siche, P.Rudolph, H.Hartmann: Journal of Crystal Growth, 1996, 159, 26-31