The drift mobilities of Cl-doped high-resistivity Cd0.8Zn0.2Te were investigated by using time-of-flight techniques. The locations of the defects that were responsible for carrier trapping were estimated to be Ec-0.03eV and Ev+0.14eV for electrons and holes, respectively. After annealing (400C, 80h), no evidence of trap-controlled mobility was detected in the case of electrons. On the other hand no significant difference, before and after annealing, was observed in the case of hole transport. The results were explained by proposing a complex defect that comprised a Cd vacancy and a Cl donor.

K.Suzuki, N.Akita, S.Dairaku, S.Seto, T.Sawada, K.Imai: Journal of Crystal Growth, 1996, 159, 406-9