The V-related defects in high-resistivity Bridgman-grown ZnxCd1-xTe crystals, where x was equal to 0.04 or 0.10, were studied by means of electron paramagnetic resonance and magnetic circular dichroism absorption spectroscopy. Only one V-related signal was detected by using the electron paramagnetic resonance technique. This was attributed to a V2+ defect with orthorhombic point symmetry. Its parameters were S = 3/2, gxx = 1.976, gyy = 1.959, and gzz = 1.974, with principal x, y, and z axes oriented along [110], [001] and [1¯10], respectively. Magnetic circular dichroism absorption spectroscopic measurements of the same crystals revealed the absorption bands of V3+, in addition to the absorption bands of V2+. The former defect was not detected by electron paramagnetic resonance. This was attributed to a strong zero-field splitting of the 3A2 ground state. The low point-symmetry of the V2+ defect was attributed to the formation of VCd-XCd second-nearest neighbor complexes in Zn-alloyed samples.

H.J.Von Bardeleben, C.Miesner, J.Monge, B.Briat, J.C.Launay, X.Launay: Semiconductor Science and Technology, 1996, 11[1], 58-62