It was recalled that the implantation of monocrystalline material with O ions caused n-type to p-type carrier conversion and led to a marked enhancement of the photo-conductive response. Here, a first microstructural investigation was made of O and Xe implantation damage as a function of dose. Cross-sectional transmission electron microscopy and secondary-ion mass spectroscopy depth-profiling were used to characterize the specimens. The microstructural observations were related to theoretical implantation profiles and to the photoconductivity of the material.

C.A.Mullan, C.J.Kiely, M.V.Yakushev, M.Imanieh, R.D.Tomlinson, A.Rockett: