Misfit dislocations at ErAs/GaAs interfaces that had been grown by molecular beam epitaxy were investigated by using the weak-beam technique of transmission electron microscopy. It was found that the observed dislocation configurations were significantly different to those at heterojunctions between so-called diamond cubic materials. Networks of almost orthogonal dislocations, with dislocations lying almost along [010] and [001], and honeycomb-like dislocation networks, were observed. The dislocation density increased as the ErAs layer thickness increased. Various dislocation reactions, between a/2<110>-type dislocations, were considered which resulted in complex dislocation configurations. A slight misalignment of the epilayer with respect to the substrate was possible if there were uneven distributions of inclined Burgers vectors in different orientations, or screw components in the dislocation network at the interface.

J.G.Zhu, C.J.Palmstrøm, C.B.Carter: Acta Metallurgica et Materialia, 1995, 43[11], 4171-7