Films of SiO2 spun-on glass, that were doped with Sn and/or Ga, were used as diffusion sources. The diffusion was studied during rapid thermal annealing, with or without any As over-pressure. It was found that the diffusivity of Sn decreased as the As over-pressure was increased. Modifying the Sn-doped spun-on glass, so as to contain 4mol%Ga, slightly reduced the Sn diffusivity. These results were explained in terms of chemical reactions between the spun-on glass and the GaAs. Highly doped layers (1018 to 3 x 1018/cm3) were obtained.

C.S.Hernandes, J.W.Swart, M.A.A.Pudenzi, G.T.Kraus, Y.Shacham-Diamand, E.P.Giannelis: Journal of the Electrochemical Society, 1995, 142[8], 2829-32