It was pointed out that 2 factors were important in determining the nature of atomic diffusion in semiconductors. One was the interaction of impurities and point defects (vacancies, intrinsic interstitial atoms) with the electron-hole sub-system. The other was the role that was played by point defects in the diffusion process.

G.S.Kulikov, R.S.Malkovich: Fizika i Tekhnika Poluprovodnikov, 1995, 29[5], 937-45 (Semiconductors, 1995, 29[5], 485-9)