Measurements of the growth of the E' center precursor and of the hole trap precursor densities, as a function of post-oxidation annealing time, showed that both of them approached saturation values and that the approach to these values was more rapid at higher temperatures. The results showed, at least qualitatively, that a kinetic component could be added to a predictive thermodynamics-based model of oxide hole trapping. The results also indicated that a thermodynamic approach to oxide hole trap precursor modelling was appropriate. That is, the relevant defect densities approached thermodynamic equilibrium or quasi-equilibrium within reasonable times.

Preliminary Investigation of the Kinetics of Post-Oxidation Rapid Thermal Anneal-Induced Hole-Trap Precursor Formation in Microelectronic SiO2 Films. J.F.Conley, P.M.Lenahan, W.F.McArthur: Applied Physics Letters, 1998, 73[15], 2188-90