Visible photoluminescence was observed from 300nm-thick films on crystalline Si which had been implanted with 30 or 55keV Si ions to doses of 5 x 1015 or 1017/cm2, and annealed in N at 500 to 1100C. The photoluminescence spectra for the sample which had been implanted with 55keV ions to a dose of 1017/cm2 showed that the red luminescence (750nm), which was related to Si nanocrystals, clearly increased in intensity with annealing temperature. A weak orange luminescence (600nm) was observed after annealing at 500 or 800C. The luminescence around 600nm became very intense when the thin oxide was implanted with 30keV ions, to a dose of 5 x 1015/cm2, at a substrate temperature of 400C. After annealing the sample in forming-gas, the photoluminescence intensity decreased sharply. It was concluded that the defects present were passivated by H, and that the luminescence observed around 600nm was caused by radiative defects which were created in the implanted samples.

Defect vs. Nanocrystal Luminescence Emitted in Si-Implanted SiO2 Layers. J.Y.Jeong, S.Im, M.S.Oh, H.B.Kim, K.H.Chae, C.N.Whang, J.H.Song: Japanese Journal of Applied Physics - 1, 1998, 37[12B], 6981-3