High-resolution transmission electron microscopic and digital filtering techniques were used to study the damage that arose from isolated displacement cascades in Zn+-implanted material. Data were obtained concerning the clustering of point defects (vacancies, self-interstitials), in small dislocation loops, at concentrations which were of the order of 1013/cm2. The effects of low-power pulsed-laser annealing were considered with regard to the analogous behavior of point defects in GaAs and in face-centered cubic metals such as Cu and Ni.

N.Pashov, G.Vitali, M.Kalitzova, M.Rossi: Physica Status Solidi A, 1995, 150[1], 239-45