Ion-induced damage was investigated, by means of Raman spectroscopy, following 100keV Si+ implantation. A new method for decomposing the Raman scattering intensity into crystalline and amorphous phase components was used to analyze the Raman spectra. It was found that, with increasing ion dose, the widths of vibrational bands of the amorphous phase were significantly increased while the width of the LO(T) phonon band of the crystalline phase remained unchanged. The longitudinal optical phonon band of the crystalline phase completely disappeared, while the transverse optical phonon mode evolved into a new band of the amorphous phase. The wave-numbers of all of the vibrational bands of the amorphous and crystalline phases shifted, to lower values, by some 10 to 15/cm.

M.Ivanda, U.V.Desnica, T.E.Haynes, I.Hartmann, W.Kiefer: Journal of Molecular Structure, 1995, 348, 33-6