The distribution of damage in material which had been implanted with Si and He was studied by means of differential reflectance spectroscopy. The latter method had a high sensitivity, and permitted the measurement of damage distributions that were caused by low doses (1010 to 3 x 1014/cm2). The effect of crystal orientations of (100), (110) and (111) upon the damage profiles was also measured. The magnitudes and shapes of the damage profiles were found to be very sensitive to the crystal orientation.

P.Kraisingdecha, M.Gal, H.H.Tan, C.Jagadish, J.S.Williams: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 109-12