Various ions (200keV to 10MeV) were implanted at room temperature, and the depth distributions of the resultant defects were determined by means of Rutherford back-scattering spectrometry and channelling measurements. These were compared with the distributions of the primary vacancies, and with predictions of the energy that was deposited. In the case of GaAs, the number of defects per primary vacancy which remained after implantation exhibited a unique dependence upon the total energy density that was deposited using various ion species and energies. It was found that the higher the total energy density which was deposited, the smaller was the number of defects that was produced per vacancy. Such a behavior was also expected for InAs, but was not observed in the phosphides, and was suggested to be the reason for the differences in room-temperature damage in phosphides and arsenides and for the ion-energy dependence of damage production in the arsenides.

W.Wesch, E.Wendler, T.Bachmann, O.Herre: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 290-3