Raman scattering studies were made of P-implanted and pulse laser-annealed material. The threshold implantation fluence for the disappearance of 1-phonon modes in the Raman spectra of ion-implanted samples was found to be greater, by an order of magnitude, than that for 2-phonon modes. The phonon correlation length decreased with increasing disorder. Lattice reconstruction during pulse laser-annealing created micro-crystallites whose size increased with annealing power density. The threshold annealing power density was estimated to be equal to 20MW/cm2 for 70keV P-implanted material after a fluence of 5 x 1015/cm2.

P.Verma, K.P.Jain, S.C.Abbi: Journal of Applied Physics, 1996, 79[8], 3921-6