The <100>-GaAs and InAs samples were implanted with 2 or 3MeV Se+ or As+ ions, using a wide range of doses and temperatures, and the implanted layers were characterized by means of Rutherford back-scattering spectrometry. The defect profiles were calculated by using the discontinuous channelling model. Defect production was described in terms of a defect interaction and amorphization model. Self-annealing during room-temperature implantation indicated an effect of electronic energy deposition in the near-surface region.

T.Bachmann, E.Wendler, W.Wesch, O.Herre, R.J.Wilson, C.Jeynes, R.M.Gwilliam, B.J.Sealy: Nuclear Instruments and Methods in Physics Research B, 1995, 99, 619-22