A transmission electron microscopic study was made of ion (2MeV As) implantation damage, and of re-growth during annealing. During low-temperature annealing, a high density of stacking faults formed upon recrystallization; but they were rarely observed after high-temperature annealing. At intermediate temperatures a much lower density of stacking faults was generated at the upper interface, between the buried amorphous layer and the crystal, than at the lower interface - where a higher concentration of as-implanted As existed. On the basis of these results, an atomic model was proposed for stacking fault formation that was induced by As clusters.

J.Jasinski, Y.Chen, J.Washburn, Z.Liliental-Weber, H.H.Tan, C.Jagadish, M.Kaminska: Applied Physics Letters, 1996, 68[11], 1501-3