The H-related defects in O-deficient silica were analyzed by using first-principles calculations. The energetics and charge-state levels of O vacancies, H and complexes in the silica framework were mapped. The neutral H bridge (E4) of quartz was identified as being the trap which was responsible for stress-induced leakage currents; a precursor of dielectric breakdown.

Hydrogen Electrochemistry and Stress-Induced Leakage Current in Silica. P.E.Blöchl, J.H.Stathis: Physical Review Letters, 1999, 83[2], 372-5