The dislocations which generated growth pyramids on the (001) facets of solution-grown material were analyzed by using transmission electron microscopy. In the case of samples which had been prepared at high temperatures, all of the active dislocations were ones that had a Burgers vector component which was perpendicular to the growth surface. In the case of samples which were grown at low temperatures, 10 to 20% of the active sources were dislocations whose Burgers vector was contained within the growth surface. A model was developed which explained how the microscopic growth process interacted with dissociated dislocations at the growth interface.

H.P.Strunk, E.Bauser: Physica Status Solidi A, 1995, 147[2], 301-12