Reflectance-difference spectroscopic studies were made of semi-insulating (l00) samples. It was shown that the reflectance-difference spectra had a component which was associated with an anisotropic surface strain that was due to 60 dislocations. The anisotropic strain led to a normalized effective change, in the lattice constant, of between 10-5 and 10-4. As well as contributing to the understanding of reflectance-difference line-shapes, the present results showed that reflectance-difference spectroscopy could be used as a very sensitive probe of the characteristics of dislocations in zincblende semiconductors.
L.F.Lastras-MartÃnez, A.Lastras-MartÃnez: Solid State Communications, 1996, 98[5], 479-83