Films were implanted with 60keV Ge+ to a dose of 1016/cm2, and were annealed at various temperatures. The specimens then exhibited a broad infra-red photoluminescence at room temperature, under excitation by the 514.5nm line of an Ar+ laser. The intensity of the infra-red photoluminescence band decreased with increasing annealing temperature, its full-width at half-maximum increased and its energy was red-shifted. Spectral analysis, and experimental Raman scattering, electron spin resonance and infra-red spectroscopic data strongly suggested that the infra-red photoluminescence was mainly related to interfacial O-deficient type defects between the oxide and Ge nanocrystals.

Defect-Related Infrared Photoluminescence in Ge+-Implanted SiO2 Films. X.L.Wu, T.Gao, G.G.Siu, S.Tong, X.M.Bao: Applied Physics Letters, 1999, 74[17], 2420-2