Electron beam-induced current and deep-level transient spectroscopy were used to study the electrical properties of misfit dislocations in lattice-mismatched heterojunctions which had been grown by means of liquid-phase epitaxy. By comparing electron beam-induced current data on diffusion length, for heterojunctions with various lattice mismatch, with the concentrations of dislocation-related deep traps, as revealed by deep-level transient spectroscopy, it was deduced that the minority-carrier lifetime was effectively controlled by misfit dislocations in the epilayer region close to the interface.

T.Wosinski, A.Makosa, J.Raczynska: Solid State Phenomena, 1996, 47-48, 541-6