Layers of Zn-doped material were grown by means of organometallic vapor-phase epitaxy. The epitaxial films consisted of a primary GaInAsP/InP layer and a secondary InP/GaInAs layer. It was shown that the redistribution of Zn acceptors in the primary epitaxial layer was strongly affected by the Zn dopant concentration in the secondary epitaxial layer. Rapid redistribution of Zn acceptors in the primary epitaxial layer occurred when the Zn dopant concentration in the secondary epitaxial layer exceeded a critical concentration of 3 x 1018/cm3.

E.F.Schubert, S.W.Downey, C.Pinzone, A.B.Emerson: Applied Physics A, 1995, 60[6], 525-7