Samples of lightly-doped n-type material were bombarded with swift heavy ions at 300K. The resultant damage was studied by means of  in situ  conductivity and Hall mobility measurements. By using previously reported deep-level transient spectroscopic data, simulations of experimental curves were carried out. The introduction rates of various resultant defects were deduced from the simulations, and were analyzed in terms of the nuclear and electronic stopping powers of the ions. Partial annealing of the di-vacancies occurred at the highest values of the electronic stopping power.

P.Marie, M.Levalois, E.Paumier: Journal of Applied Physics, 1996, 79[10], 7555-62