It was shown, by rapidly heating and cooling a Si-on-insulator wafer, that dislocations were created at the interface between the thin Si slab and the underlying oxide. Such substrates were well-suited for these studied because simple heat-treatment introduced defects at a well-defined small distance below the surface. Low-energy electron microscopy revealed the strain fields which these dislocations produced at the surface of the Si slab. The profile of uniaxial strain perpendicular to the line of an individual buried dislocation was determined, as well as dynamic changes in the surface-stress state which were produced by hetero-epitaxy.

Quantitative Determination of Dislocation-Induced Strain at the Surface of (001) Silicon-on-Insulator P.Sutter, M.G.Lagally: Physical Review Letters, 1999, 82[7], 1490-3