Crystals were implanted with H (1MeV, 1014/cm2), and electrical measurements were performed on the implanted samples. The latter samples were also examined after furnace annealing. It was found that the micro-hardness of the implanted samples decreased with increasing annealing temperature. Hall-effect studies showed that the carrier mobility of the implanted samples decreased with increasing annealing temperature. The changes in electrical behavior were attributed to the formation of a neutral complex that involved H and donor atoms.

J.Arokiaraj, S.Arulkumaran, N.Dharmarasu, J.Kumar: Nuclear Instruments and Methods in Physics Research B, 1995, 101[3], 240-2