The electrical activation of implanted group-IV and group-VI elements was compared. It was found that, in general, greater electrical activation was achieved in the case of group-VI elements, under the given conditions of dosage and annealing. In the case of group-IV elements, a greater concentration of dopant-defect complexes and an amphoteric nature of the dopant contributed to the lower relative electrical activation that was observed at low and high doses, respectively.

M.C.Ridgway, P.Kringhj, C.M.Johnson: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 311-4