A Raman spectroscopic study was made of the lattice damage, which was caused by Si implantation (1012 to 5 x 1014/cm2) of semi-insulating material, and of the subsequent lattice recovery during rapid thermal annealing. It was found that, with increasing implantation dose, an intensity reduction of the first-order and second-order Raman peaks and an enhancement of disorder-activated modes was observed. In the case of samples which had been implanted to more than 1014/cm2, the Raman spectra resembled those of amorphous material and the samples could be considered to be fully amorphized. Crystallinity was recovered, by using rapid thermal annealing (875C, 10s), even in the case of samples which had been implanted with the highest dose. After annealing, the Raman spectra exhibited no trace of disorder-activated modes, and the intensity of the characteristic second-order peaks approached the value that was found for non-implanted InP.

R.Cuscó, G.Talamàs, L.Artús, J.M.Martin, G.González-Díaz: Journal of Applied Physics, 1996, 79[8], 3927-9