Samples were implanted with Zn (1.2 or 2.5MeV, 5 x 1014 to 5 x 1015/cm2, 200C), and were investigated using ion beam methods and cross-sectional transmission electron microscopy. The effect of rapid thermal annealing was also studied. It was found that, after implantation, there was no sign of amorphization or extended defects. On the other hand, point-like defects were present. The surface region recovered almost completely during annealing while, in the bulk, the point-like defects agglomerated into dislocation loops. There was also a marked redistribution of Zn during annealing.

A.Kling, H.Krause, R.H.Flagmeyer, J.Vogt, T.Butz: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 302-6