The formation of micro-twins in InP during metalorganic vapor-phase epitaxial growth onto exactly (001)-oriented Si substrates was examined. Two different types of micro-twin were found. Type-1 was limited to the low-temperature buffer region near to the hetero-interface. Twin lamellae of the second type, which traversed the entire epitaxial layer, lay predominantly on (1¯1¯1) and (111) planes. These stacking faults hindered the motion of threading dislocations, and led to inhomogeneously distributed etch pits. The formation of type-2 micro-twins was controlled by a 3-dimensional growth process. The use of a GaAs buffer layer led to predominantly 2-dimensional growth, and thus avoided type-2 micro-twins.

H.H.Wehmann, G.P.Tang, A.Koch, M.Seibt, A.Schlachetzki: Solid State Phenomena, 1996, 47-48, 547-52