A 2-dimensional simulation model was developed, for dopant diffusion in polycrystalline material, which included dopant clustering in grain interiors as well as in grain boundaries. The grain growth model was coupled to the diffusion coefficient of the dopants. After high-dose implantation, trapping and emission between the grain interiors and boundaries, and grain growth, were the main processes during heat treatment. The polycrystalline grains were assumed to be tiny squares which grew from their initial size.

H.Puchner, S.Selberherr: IEEE Transactions on Electron Devices, 1995, 42[10], 1750-5