In a polemical discussion, the first-named author noted that the second-named author had explained an enhanced diffusion of dopants, in Si at high concentrations, to the interaction of vacancies with several dopant atoms. The first-named author argued that the result was questionable since no account had been taken of interactions between dopant atoms. This predominated at very high concentrations, and was sufficient to give effective diffusion coefficients that were in good agreement with experiment. The second-named author held that the criticism was without merit, and that the alternative explanation that had been proposed was based upon an analysis which contained a series of critical errors.

E.Antoncik: Journal of Applied Physics, 1996, 79[9], 7407-8, S.T.Dunham: Journal of Applied Physics, 1996, 79[9], 7409-10