It was recalled that the evaporation of {311} self-interstitial clusters had been linked to the occurrence of transient enhanced diffusion in Si. A theory of cluster evaporation was described here which was based upon first-order kinetic equations, and which described the data well over a range of temperatures. The theory explained various unexpected features of transient enhanced diffusion: such as the apparently steady degree of enhancement during its occurrence, and the dependence of that duration upon implantation energy and dose. The binding energy which was used to match the theory to experiment was in good agreement with molecular dynamics calculations of cluster stability in Si.

C.S.Rafferty, G.H.Gilmer, M.Jaraiz, D.Eaglesham, H.J.Gossmann: Applied Physics Letters, 1996, 68[17], 2395-7