The contribution, to gettering, of interstitial injection that was induced by P and B diffusion under non-oxidizing conditions was considered with regard to short-range (doped-layer) effects and long-range (bulk) effects. It was shown that a positive concentration gradient of Si interstitials within a highly doped layer was favorable to the gettering of substitutional metallic species via a kick-out mechanism during P and B diffusion in Si. Also, the contribution of P and B diffusion to the gettering of 3d elements in Si was significant only within the highly P-doped layer (short-range effect). The predictions of the diffusion-induced gettering model agreed with experimental evidence on the P diffusion-gettering of Co and on the P diffusion-gettering and B diffusion-gettering of Au in Si.

F.Gaiseanu, W.Schröter: Journal of the Electrochemical Society, 1996, 143[1], 361-2