A radiotracer technique was used to investigate how the diffusion of Mn from a layer on a Si surface affected the distribution of 63Ni in material which had been doped with Ni using a diffusion technique (1200C, 2h). The results revealed a sharp decrease (by an order of magnitude) in the Ni concentration within the interior; due to the repeated annealing of samples with a Mn layer at the surface. This effect was attributed to a gettering that was induced by the Mn layer.

G.S.Kulikov, J.A.Chichikalyuk, S.A.Yusupova: Fizika i Tekhnika Poluprovodnikov, 1995, 29[3], 469-73 (Semiconductors, 1995, 29[3], 242-4)