The diffusion, at temperatures below 500C, of interstitial O in Ge-doped crystals was monitored via the pressure-induced dichroism of an infra-red band at 1106/cm. The dopant concentration ranged from 1018 to 2 x 1020/cm3. The results were compared with the formation kinetics of thermal donors. This showed that the Ge dopant had an effect, mediated by a local stress field, upon the diffusion of O. That is, there was an increased Oi diffusion component. There was also an effect upon the generation and annihilation of intrinsic point defects such as vacancies and interstitials (Sii). In particular, Sii generation was hindered. On the other hand, the annihilation of these defects in the presence of Ge was promoted. The results were attributed to a slowing down, of the formation of thermal donors, with increasing Ge concentration.

V.M.Babich, N.P.Baran, K.I.Zotov, V.L.Kiritsa, V.B.Kovalchuk: Fizika i Tekhnika Poluprovodnikov, 1995, 29[1], 58-64 (Semiconductors, 1995, 29[1], 30-3)