It was recalled that the diffusion-doping of this material was accompanied by impurity-impurity interactions which led to the formation of silicide phases that existed in solid solution in the given temperature range. The formation of new phases then caused substantial changes in the defect structure, and caused so-called anomalous effects like those observed during the diffusion of P. It was shown that the primary cause of degradation was a mismatch of the generation and recombination kinetics of defects. It was concluded that the reliability of semiconductor devices could be appreciably improved by reducing the size of active elements and by concentrating on the factors which controlled the defect structure during processing.

V.I.Sokolov: Fizika i Tekhnika Poluprovodnikov, 1995, 29[5], 842-56 (Semiconductors, 1995, 29[5], 436-43)