Modification, by post-oxidation NO-treatment, of the interfaces of thermally grown Si(100)/SiO2 layers was studied by means of nuclear reaction analysis and electron paramagnetic resonance spectroscopy. The results indicated the selective incorporation of NO molecules at the interface, plus a marked reduction in the interface defect density. The Pb center density, which was typically equal to 2 x 102/cm2 in as-oxidized samples, was reduced to below 1011/cm2 without H passivation. It was concluded that thermal treatment in an NO atmosphere offered the possibility of the formation of H-free low-defect interfaces which conserved the qualities of the SiO2 dielectric.

Formation of Modified Si/SiO2 Interfaces with Intrinsic Low Defect Concentrations. L.G.Gosset, J.J.Ganem, H.J.Von Bardeleben, S.Rigo, I.Trimaille, J.L.Cantin, T.Akermark, I.C.Vickridge: Journal of Applied Physics, 1999, 85[7], 3661-5