A study was made of the manner in which as-grown structural defects such as dislocations affected the formation of other defects in n-type material when subjected to external influences. The heat treatment and plastic deformation of dislocation-free material that had been grown by float zoning in an Ar atmosphere led to an accumulation of thermal donors of TD-I type. Gamma irradiation changed the accumulation behavior of the principal radiation defects. The results could be explained in terms of the formation of small inclusions during crystal growth. These defects were not detected by selective etching techniques, but gave rise to stresses in the lattice.

L.A.Kazakevich, P.F.Lugakov: Fizika i Tekhnika Poluprovodnikov, 1995, 29[7], 1226-30 (Semiconductors, 1995, 29[7], 633-5)