The implantation of (100) wafers was carried out (160keV Ge, 6 x 1016/cm2) between room temperature and 500C. Post-implantation annealing (950C, 1h) was carried out in N. Cross-sectional transmission electron microscopy showed that the substrate temperature had a considerable effect upon not only the as-implanted material, but also upon the annealed Ge-implanted Si. It was suggested that higher substrate temperatures would be beneficial in improving the crystallinity of surface SiGe layers, by eliminating surface defects. The effects of the substrate temperature could be divided into 2 types. After implantation between room temperature and 100C, an amorphous layer still existed in as-implanted material. Extended dislocations, and a high density of surface defects remained in the recrystallized SiGe layer after annealing. After implantation at temperatures of between 200 and 500C, where an amorphous layer could not be generated - due to dynamic annealing, a layer of about 150nm in thickness at the surface was found to be almost defect-free. Only extended dislocations, large in size and low in density, existed at a depth of 350nm from the surface. No end-of-range defects were observed in any of the samples.

N.Chen, R.Schork, H.Ryssel: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 286-9