The formation of amorphous layers and residual defects in SiF+/BF2+-implanted and annealed (100) material was investigated at the atomic level by means of high-resolution transmission electron microscopy. Amorphous layers, whose depth was equal to about 70% of those of amorphous layers that were formed by Si+ pre-amorphization using the same implantation energies, could be formed by SiF+ pre-amorphization. Two distinct layers of defects were formed in SiF+/BF2+-implanted wafers that had been normally annealed (600C, 1h) and then rapidly thermally annealed (950C, 30s). A layer that was observed near to the surface region consisted of intrinsic stacking faults that were bounded by 30 Shockley partial dislocations, twins, and amorphous regions. Another layer, near to the original amorphous/crystalline interface, consisted of Frank partial dislocations with a Burgers vector of 1/3a<111>, and 60 perfect dislocations with a Burgers vector of 1/2a<110>. These defects were formed due to retardation of the growth rate by F atoms, to the out-diffusion of F atoms, and to lattice misorientations.

J.H.Kim, J.Y.Lee, J.C.Paik, H.J.Kim: Journal of Applied Physics, 1996, 79[10], 7549-54