Electron paramagnetic resonance and double-crystal X-ray diffraction techniques were used to analyze damage accumulation, as a function of dose, in material which had been implanted with B and Si ions, having 50keV or MeV energies, at room temperature. The electron paramagnetic resonance data revealed the presence of Si-P3 (neutral tetra-vacancy), D centers (indicating amorphous material), and  centers (probably vacancy complexes). The total number of  plus D centers, and the depth integral of the lattice strain which was indicated by X-ray data, increased sub-linearly with increasing dose. The sub-linearity was interpreted in terms of dynamic annealing of the defects during implantation.

L.Sealy, R.C.Barklie, G.Lulli, R.Nipoti, R.Balboni, S.Milita, M.Servidori: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 215-8