The precipitation of N which had been implanted at 1000C was stimulated by the introduction of nuclei by means of a preliminary bombardment with N+ or Ar+ ions at a lower temperature. It was found that the distribution of the precipitated N varied appreciably as a function of the preliminary bombardment conditions. The results were explained in terms of a competition, among sinks, for impurity atoms and point defects.

G.A.Kachurin, I.E.Tyschenko, S.A.Tiis, A.E.Plotnikov: Fizika i Tekhnika Poluprovodnikov, 1995, 29[3], 495-9 (Semiconductors, 1995, 29[3], 256-8)