Samples were implanted with 2MeV Al ions (140 to 450K, 8 x 1012 to 1017/cm2) and were studied by means of optical reflectivity depth profiling. The results for implantation at 350K indicated that amorphous volumes which were produced at the depth of the nuclear stopping power maximum acted as sinks for point defects in the profile wings. At implantation temperatures of 400K and above, the damage profiles for doses of 5 x 1016/cm2 or more exhibited a reduction in damage at the depth of the former damage maximum. This was attributed to a conversion into extended defects. An impeding effect of implanted Al upon the amorphization of Si was revealed by comparing the critical doses with those for 2MeV Si ions.

B.Pfeifer, J.K.N.Lindner, B.Rauschenbach, B.Stritzker: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 150-4