A model was proposed for the time-dependence of the surface recombination velocity of Si interstitials at non-oxidizing interfaces. This model took account of the experimentally observed diffusion of Si interstitials through a thermal oxide. A comparison with new and previously published experimental results demonstrated that the proposed model could accurately simulate 1-dimensional as well as 2-dimensional experiments. An analysis of the experimental data permitted an estimation to be made of the segregation coefficient of Si interstitials at the interface.

Model for the Recombination Velocity of Silicon Interstitials at Nonoxidizing Interfaces. C.Tsamis, D.Tsoukalas: Journal of Applied Physics, 1998, 84[12], 6650-8