Implantation with MeV B ions was carried out on substrates which were patterned with an oxide mask. Secondary defects, under the mask edge, which were generated after annealing were studied by means of cross-sectional transmission electron microscopy. The doped regions which were created by implantation were investigated by means of 1- and 2-dimensional spreading resistance profiling, and the results were compared with analytical and Monte Carlo calculations. It was found that the defect density and the 2-dimensional B profiles were related to the slope of the oxide mask edge. The increase in lateral spreading was attributed to ion penetration through the edge of the oxide mask. The formation of defects was explained in terms of the number of displaced Si atoms under the oxide mask.

V.Privitera, V.Raineri, M.Saggio, F.Priolo, E.Rimini: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 144-9