The implantation (5.6MeV 23Si3+, 107 to 109/cm2) of (100) specimens of n-type material, at temperatures of up to 400C, was studied. Deep-level transient spectroscopy revealed that, after implantation at 400C, three new levels appeared at about 0.22, 0.34 and 0.47eV below the conduction band edge. Evidence was found for the existence of a high-order vacancy complex which produced the Ec - 0.22 and Ec - 0.47eV levels. These appeared at temperatures above 300C, via a gradual shift of di-vacancy peaks at Ec - 0.23 and Ec - 0.43eV, respectively. The Ec - 0.34eV level was attributed to a complex that involved impurities at concentrations of less than 1014/cm3. A vacancy-O level at Ec - 0.18eV increased in amplitude, with temperature, and was the predominant peak at 400C.

J.Lalita, B.G.Svensson, C.Jagadish: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 210-4