Defect evolution and accumulation in ion-implanted samples were investigated by means of  in situ  conductivity measurements. Upon bombardment with 400keV Si and 2.7MeV Pt ions at room temperature, the initial conductivity of 0.04C/cm decreased by some 4 orders of magnitude to a value (2 x 10-6S/cm) that was characteristic of intrinsic Si. It then slowly increased at higher fluences. The marked decrease in conductivity that was observed at low fluences could be explained in terms of a dopant compensation that was produced by deep levels which were introduced by di-vacancies and complex defects in the band gap.

A.Battaglia, S.Coffa, F.Priolo, C.Spinella, S.Libertino: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 219-22