The effect of a forward bias upon the accumulation of defect complexes in p+-n diodes during 75keV He+ ion implantation was investigated. Deep-level transient spectrometry was used to determine the concentration, spatial distribution and energy levels of implantation-induced deep traps. It was found that an  in situ  forward bias, with a current density of 2A/cm2, caused a more than order of magnitude suppression of deep trap accumulation. This was attributed to the recombination-enhanced migration of mobile constituents before complex formation. An important new electron deep trap which was located at Ec - 0.55eV was investigated. Its annealing kinetics, charge carrier capture cross-section, and spatial distribution were determined.

J.N.Erokhin, J.Ravi, C.W.White, G.A.Rozgonyi: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 223-6