An O precipitation phenomenon was detected in Czochralski samples which had been singly or doubly implanted with Al, Si, P, O or C ions (1 to 6.8MeV, 4 x 1014 to 1015/cm2). A marked interaction was observed between the implanted species, the implantation damage and O which was present after annealing (1100 or 1200C, 0.5h). The O precipitation was greatly enhanced by the presence of Al.

A.La Ferla, G.Galvagno, V.Raineri, F.Priolo, A.Carnera, A.Gasparotto, E.Rimini: Nuclear Instruments and Methods in Physics Research B, 1995, 96[1-2], 232-5